From the Paul Scherrer Institute, T-U Dresden, and micro resist technology GmbH comes an experimental comparison of electron beam and EUV exposures in three resist systems: PMMA, ZEP-520A, and mr-PosEBR. Reasoning that the chemistry of EUV exposure bears similarity to that of e-beam exposure, the researchers chose commercially available e-beam resists.
The imagery shows array resolution down to 22 nm half-pitch with EUV doses in the order of ~80-100 mJ/cm2. Whether the line-edge roughness can be improved remains to be seen, but in this dose range, shot-noise should not be an issue.
Reference: Fallica, et al., “Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography”, arXiv:1710.08733.